Mathematical Models and Methods in Applied Sciences · 2002 · 17 citations · 26 references
Natural SciencesElectrical EngineeringPhysicsFluid DynamicsSemiconductor DevicesTransport PhenomenaBoundary ConditionsBoundary-value ProblemsDevice ModelingEquations Of StatePartial Differential EquationsSemiconductor PhysicsBoundary Value Problems In TransportCarrier RelaxationElectrical Transport PropertiesHydrodynamic Device ModelingInitial Value Problem FormulationInitial-boundary Value ProblemsSemiconductor Device ModelingWeak Solutions
The initial-boundary value problem of a simplified one-dimensional hydrodynamic model for semiconductors is considered. The global weak solution and its relaxation limit are obtained through using the compensated compactness methods. The traces of weak solutions are also discussed.
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