Applied Physics Letters · 1991 · 46 citations · 7 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsIii-v SemiconductorsLaser DiodesQuantum WellsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsCarrier Material QualityHeterostructure DevicesHeterostructure Field-effect TransistorsHeterostructure TransistorsMolecular Beam EpitaxyQuantum Well GrowthQuantum Well StructuresSemiconductor Laser Diodes
We report the successful growth of high quality molecular beam epitaxy (MBE) GaAs, AlGaAs, AlGaAs/GaAs modulation doped heterostructures and a GaAs/InGaAs/GaAs quantum well on GaAs (111)B substrates. Modulation doped heterostructures show a 77 K mobility of 145 500 cm2/V s with a sheet density of 5.0×1011 cm−2. Photoluminescence of (111)B GaAs indicates a lower carbon incorporation than achieved on (100) substrates. The low growth temperature and high material quality obtainable in (111)B growth will provide advantages for laser diodes and heterostructure field effect transistors.
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Toshiro Hayakawa, Masafumi Kondo, Takahiro Suyama et al. · Japanese Journal of Applied Physics · 1987 · 163 citations