Molecular Beam Epitaxial Growth of InP

Abstract

Epitaxial layers of have been grown on the (1overbar;1overbar;) face (P face) of substrates by molecular beam epitaxy. The layers were grown at substrate temperatures ranging from 220° to 510°C, using separate In and P sources. Unintentionally doped layers grown above ∼350°C appear to be single crystal with and . Layers grown at substrate temperatures below ∼350°C appear to be composed of well‐oriented crystallites, and have poor electrical and photoluminescent properties. Orientation‐dependent faceting is a prominent feature of layers grown on () substrates at temperatures >350°C. Epitaxial layers have also been grown on the (111) face (In face) and the (100) face of substrates. Orientation‐dependent faceting is much less prominent for growth on the (100) face, and it is possible to obtain smooth, featureless (100) epitaxial layers.