SiC X-ray detectors for harsh environments

Abstract

We have characterised a number of SiC Schottky Diodes as soft X-ray photon counting detectors over the temperature range -30°C to +80°C. We present the spectroscopic performance, as measured over the energy range ~ 6 keV–30 keV and correlate the data with measurements of the temperature dependence of the device leakage current. The results show that these detectors can be used for X-ray photon counting spectroscopy over a wide temperature range. Measurement of the radiation tolerance of Semi Transparent SiC Schottky Diodes (STSSD) has shown that these devices can still operate as photon counting X-ray spectrometers after proton irradiation (total dose of 1013 cm-2, 50 MeV). We present measurements on proton irradiated STSSDs that indicate that radiation induced traps, located in the upper half of the bandgap, have reduced the mobility and concentration of charge carriers. X-ray spectra predicted using a Monte Carlo model for SiC diodes are compared with measured spectra.