Evidence of Ga₂Se₃-Related Compounds on Se-Stabilized GaAs Surfaces

Abstract

A Se-stabilized GaAs(001) surface is examined by extended X-ray absorption fine structure (EXAFS) analysis. The Se K-edge EXAFS shows components due not only to the first but also the second nearest neighbors, indicating that the Se atoms are incorporated into ordered atomic arrangements. Comparing the interatomic distances to those measured for Ga 2 Se 3 and GaSe, it is concluded that the nature of the surface compound on the Se-stabilized GaAs surface is close to that of Ga 2 Se 3 .