Electroplating Metal Contacts on Germanium and Silicon

Abstract

Various metals have been plated on germanium and silicon. These semiconductors usually have oxide layers on them which could interfere with the intimate contact required between metal and semiconductor for good adhesion and the desired electrical properties. Oxide films and residues from chemical etching on germanium can be removed by cathodic reduction prior to metal deposition in many plating solutions. Sixteen different metals were plated on n‐ and p‐type germanium. Since oxide films on silicon are difficult to reduce cathodically, other methods of removing the oxide film are employed to produce adherent electrodeposits on silicon.