Terahertz luminescence in strained GaAsN:Be layers under strong electric fields

Abstract

The authors report on the experimental studies of terahertz emission from strained GaAsN∕GaAs microstructures doped with beryllium at the conditions of electric breakdown of the shallow impurity. The terahertz emission spectrum demonstrates several distinctive signatures that are related to spontaneous optical transitions between resonant and localized states of the acceptor. The energy spectrum calculated for the Be acceptor in the GaAsN∕GaAs heterostructure fits reasonably well with the experimentally observed peaks.