A. G. Gladyshev - Concepedia

Author

A. G. Gladyshev

Also Known As

A G Gladyshev, A. G. GLADYSHEV, A. G. Gladyshev, A. Gladyshev, A.G. Gladyshev, A.Yu. Gladyshev, A. G. Gladyshev, Andrey G Gladyshev, Andrey G. Gladyshev, Andrey Gladyshev

214

Publications

1.1K

Citations

H-Index

Concepts

All Affiliations

ITMO University Ioffe Institute Saint Petersburg State Electrotechnical University Russian Academy of Sciences Yaroslav-the-Wise Novgorod State University

About

A. G. Gladyshev is an author at ITMO University specializing in optoelectronics, engineering, and photonics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	10	10	294
2	Applied Physics	8	8	272
3	Electrical Engineering	5	5	164
4	Materials Science	3	3	91
5	Materials Engineering	1	1	41

A. G. Gladyshev

Publications

754

Citations

H-Index

Page 1

	Year	Citations
MBE-grown metamorphic lasers for applications at telecom wavelengths N. N. Ledentsov, V. A. Shchukin, T. Kettler, Journal of Crystal Growth PhotonicsOptical MaterialsEngineeringApplied PhysicsLaser Applications	2006	57
6-mW Single-Mode High-Speed 1550-nm Wafer-Fused VCSELs for DWDM Application A. V. Babichev, L. Ya. Karachinsky, I. I. Novikov, IEEE Journal of Quantum Electronics Optical MaterialsEngineeringLaser ScienceDwdm ApplicationLaser Physics	2017	49
Heterostructures for quantum-cascade lasers of the wavelength range of 7–8 μm A. V. Babichev, A. G. Gladyshev, A. V. Filimonov, Technical Physics Letters	2017	46
Metamorphic growth for application in long-wavelength (1.3–1.55 µm) lasers and MODFET-type structures on GaAs substrates Elizaveta Semenova, A. E. Zhukov, S. S. Mikhrin, Nanotechnology Wide-bandgap SemiconductorEngineeringOptoelectronic DevicesMetamorphic Ingaas MatrixGaas Substrates	2004	41
Metamorphic lasers for 1.3-µm spectral range grown on GaAs substrates by MBE A. E. Zhukov, A. R. Kovsh, S. S. Mikhrin, Semiconductors	2003	32
High-power 1.5 µm InAs-InGaAs quantum dot lasers on GaAs substrates Yu. M. Shernyakov, N. V. Kryzhanovskaya, A. G. Gladyshev, Semiconductors	2004	29
High Power Single Mode 1300-nm Superlattice Based VCSEL: Impact of the Buried Tunnel Junction Diameter on Performance S. A. Blokhin, A. V. Babichev, A. G. Gladyshev, IEEE Journal of Quantum Electronics SemiconductorsPhotonicsElectrical EngineeringGain CoefficientEngineering	2022	29
Wafer‐fused 1300 nm VCSELs with an active region based on superlattice S. A. Blokhin, A. V. Babichev, A. G. Gladyshev, Electronics Letters EngineeringLaser ScienceLaser ApplicationsLaser MaterialEye Diagrams	2021	27
Dual-Frequency Generation in Quantum Cascade Lasers of the 8-μm Spectral Range V. V. Dudelev, S. N. Losev, V. Yu. Mylnikov, Optics and Spectroscopy	2018	26
Room Temperature Lasing of Single-Mode Arched-Cavity Quantum-Cascade Lasers A. V. Babichev, A. G. Gladyshev, A. S. Kurochkin, Technical Physics Letters	2019	24

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