Dense Self‐Assembly on Sparse Chemical Patterns: Rectifying and Multiplying Lithographic Patterns Using Block Copolymers

Abstract

A lithography-friendly self-assembly process which multiplies and rectifies an existing resist patterns is demonstrated here. A polymer film (right figure) has assembled at a 14 nm half-pitch on a thin resist pattern at twice the period (left figure). This directed self-assembly process dramatically heals defects and reduces feature size variation of the ill-defined resist patterns.