Effect of Cosmic Rays on Computer Memories

TLDR

The study develops and applies a method to evaluate cosmic‑ray effects on computer memories. The method models sea‑level cosmic‑ray flux, estimates silicon interactions that generate charge bursts, relates these bursts to integrated‑circuit components, and assesses shielding, altitude, and solar‑cycle influences. Cosmic‑ray nucleons and muons produce marginal error rates in current memories but could be significant for next‑generation circuitry, and error rates rise sharply with altitude, suggesting altitude testing to reduce sensitivity.

Abstract

A method is developed for evaluating the effects of cosmic rays on computer memories and is applied to some typical memory devices. The sea-level flux of cosmic-ray particles is reviewed and the interaction of each type of particle with silicon is estimated, with emphasis on processes that produce bursts of charge. These charge pulses are then related to typical computer large-scale integrated circuit components and cosmic-ray-induced errors are estimated. The effects of shielding (such as building ceilings and walls), altitude, and solar cycle are estimated. Cosmic-ray nucleons and muons can cause errors in current memories at a level of marginal significance, and there may be a very significant effect in the next generation of computer memory circuitry. Error rates increase rapidly with altitude, which may be used for testing to make electronic devices less sensitive to cosmic rays.