Electronic and optical properties of quaternary alloy GaAsBiN lattice-matched to GaAs

Abstract

Employing first-principles combined with hybrid functional calculations, the electronic and optical properties of GaAs alloyed with isovalent impurities Bi and N are investigated. As GaAsBiN alloy is a quaternary alloy, the band gap and the lattice constant of the alloy can be individually tuned. Both impurities are important to the valence band and conduction band of the alloy, with the band gap of the alloy being dramatically reduced by Bi 6p states and N localized 2s states. Interestingly, the calculated optical properties of the quaternary alloy are similar to those of undoped GaAs except that the absorption edge has a redshift toward lower energy. These results suggest potential interest in the long-wavelength applications of GaAsBiN alloy.