Band Gap Tuning

Band Gap Tuning is a materials engineering method that precisely adjusts the energy difference between valence and conduction bands in semiconductors through size-dependent quantum confinement effects, enabling tailored optoelectronic properties in nanoscale materials.

2.4K

Publications

158.4K

Citations

10.9K

Authors

2.1K

Institutions

Publications per year

2017–2026

1.2K

Authors

10.9K

  1. SW
    Su‐Huai Wei

    National Laboratory of the Rockies, United States

    14 publications · 1.8K citations

    14

    h-index

  2. JL
    Jingbo Li

    Institute of Semiconductors, China

    13 publications · 946 citations

    13

    h-index

  3. KW
    Kenji Watanabe

    National Institute for Materials Science, Japan

    13 publications · 1.2K citations

    13

    h-index

  4. TT
    Takashi Taniguchi

    National Institute for Materials Science, Japan

    13 publications · 1.2K citations

    13

    h-index

  5. ZC
    Zhongfang Chen

    University of Puerto Rico at Río Piedras, Puerto Rico

    12 publications · 1.2K citations

    12

    h-index

1–5 of 10.9K

Venues

  1. Nano Letters

    77 publications · 12.7K citations

    53

    h-index

  2. Applied Physics Letters

    122 publications · 7.5K citations

    48

    h-index

  3. The Journal of Physical Chemistry C

    119 publications · 7.3K citations

    46

    h-index

  4. ACS Nano

    59 publications · 10.5K citations

    41

    h-index

  5. Physical Review B

    PRB · 55 publications · 8.2K citations

    41

    h-index

1–5