Eduardo V. Castro

Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect

Eduardo V. Castro, Kostya S. Novoselov, N. M. R. Peres et al. · Physical Review Letters · 2007 · 2K citations · Full text

Semiconductors, Materials Science, Quantum Science +15

Limits on Charge Carrier Mobility in Suspended Graphene due to Flexural Phonons

Eduardo V. Castro, Héctor Ochoa, M. I. Katsnelson et al. · Physical Review Letters · 2010 · 380 citations · Full text

Localized States at Zigzag Edges of Bilayer Graphene

Eduardo V. Castro, N. M. R. Peres, J. M. B. Lopes dos Santos et al. · Physical Review Letters · 2008 · 149 citations · Full text

Graphene Nanomeshes, Engineering, Physics +7

Low-Density Ferromagnetism in Biased Bilayer Graphene

Eduardo V. Castro, N. M. R. Peres, Tobias Stauber et al. · Physical Review Letters · 2008 · 144 citations · Full text

Materials Science, Magnetism, Graphene Nanomeshes +10

Algebraic solution of a graphene layer in transverse electric and perpendicular magnetic fields

N. M. R. Peres, Eduardo V. Castro · Journal of Physics Condensed Matter · 2007 · 100 citations · Full text

Spectral Theory, Graphene Nanomeshes, Engineering +13