Journal of The Electrochemical Society · 1967 · 13 citations · 0 references
EngineeringMaterials EngineeringMaterials ScienceSemiconductor DevicesSemiconductor MaterialsThin FilmsEtching ProcessesMask FabricationMasking ProceduresSemiconductor Device MaterialsSemiconductor InterfacesThin Film EtchingDielectric InterfacesEtch Mask FabricationEtch Mask MaterialsMaskingSiliconSilicon NitrideThin-film Mask Design
A new masking method utilizing an intermediate integral Mo film is described. The Mo mask is a practical method for etching very high resolution patterns in passivating dielectric films including films of silicon nitride which heretofore have been unmanageable. The Mo film has much better masking properties than the photoresists now used.