Applied Physics Letters · 1985 · 29 citations · 6 references
Natural SciencesMaterials SciencePhysicsElectronic MaterialsSemiconductor DevicesSpectroscopyDefects In Electronic MaterialsIon ImplantationRadiation Damage In MaterialsSemiconductor DefectsSilicon MaterialsDefect-related LuminescenceIon Beam EtchingIon Beam ModificationIon Implantation EffectsLow-energy Ion ImplantationPhotoluminescence SpectroscopyRadiation-induced DefectsSilicon Defects
Using photoluminescence we have examined defects introduced into silicon by low-energy inert gas ion bombardment (ion beam etching or ion beam milling, with Ne+, Ar+, Kr+, and Xe+) in the 200–2000 eV ion energy range. The spectra indicate the presence of noble gas associated centers which appear to be identical to the defect which is responsible for the well-known I1 spectrum (or W), except for modifications due to the interaction with the noble gas atoms. The appearance of the modified I1 spectra at these low bombardment energies suggests a simple structure of the underlying defects.
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