Large-Area Doping Process for Fabrication of poly-Si Thin Film Transistors Using Bucket Ion Source and XeCl Excimer Laser Annealing

Abstract

A large-area doping process for polycrystalline Si (poly-Si) thin-film transistor addressed liquid crystal displays (TFT/LCD's) has been developed. A large ion beam that was extracted from the bucket ion source and a XeCl excimer laser were utilized for impurity doping and impurity activation. A sufficiently low value of sheet resistance (500±25 Ω/\Box) was obtained for an implantation time of 10 s. The poly-Si TFT's fabricated by using this technique have good characteristics and uniformity. This technique seems suitable for the fabrication of large area poly-Si TFT/LCD's.