Influence of potential fluctuation on optical and electrical properties in GaN

Abstract

We observed strong correlation between optical properties and transport properties in GaN. Both the intensity and the energy of near-band edge photoluminescence (PL) peak in GaN:Si vary with its mobility. Such behavior has been explained by the potential fluctuation associated with the inhomogeneous impurities or local defects, leading to the space-charge scattering of carriers and the redshift of the PL line. We also discuss the strain relaxation in GaN:Si.