Diffusion Coefficients of Impurities in Silicon Melt

Abstract

Silicon single crystals are grown by the Czochralski method with a variety of growth rates and rotation rates. Segregation coefficients of impurities are found to depend on the growth conditions as is expected by the existing theory. Diffusion coefficients of impurities in silicon melt are determined for B, Al, Ga, In, P, As and Sb. Diffusion coefficients of group V impurities are found to increase as the tetrahedral covalent radius of the impurity atom decreases. In the case of group III impurities, the dependence of diffusion coefficients on the tetrahedral covalent radius is not so clear as in the case of group V impurities.