Correction to "Revision of Tunneling Field-Effect Transistor in Standard CMOS Technologies"

Abstract

Previously published results by the authors, from 2004 to 2006, on the tunneling field-effect transistor (TFET) are revised in this correction. The devices that they had characterized as TFETs contain a conducting path in parallel to the intended tunneling junction. Therefore, the measured characteristics are similar to a MOSFET with a resistive source connection