IEEE Electron Device Letters · 2007 · 41 citations · 3 references
EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyField-effect TransistorsMetal-oxide-semiconductor Field-effect TransistorsShort-channel EffectsTunnelingCmos ScalingTunneling EffectsTunneling Field-effect Transistors
Previously published results by the authors, from 2004 to 2006, on the tunneling field-effect transistor (TFET) are revised in this correction. The devices that they had characterized as TFETs contain a conducting path in parallel to the intended tunneling junction. Therefore, the measured characteristics are similar to a MOSFET with a resistive source connection
3
Complementary tunneling transistor for low power application
Pengzhan Wang, K. Hilsenbeck, T. Nirschl et al. · Solid-State Electronics · 2004 · 519 citations
Engineering, Electrical Engineering, Electronic Materials +10