M. Fulde

Scaling properties of the tunneling field effect transistor (TFET): Device and circuit

T. Nirschl, St. Henzler, J. Fischer et al. · Solid-State Electronics · 2005 · 101 citations

Device Modeling, Electrical Engineering, Engineering +6

13.2 A digital multimode polar transmitter supporting 40MHz LTE Carrier Aggregation in 28nm CMOS

M. Fulde, Alexander Belitzer, Zdravko Boos et al. · 2017 · 63 citations

Wireless Communications, Electrical Engineering, Nonlinear Conversion +10

Correction to "Revision of Tunneling Field-Effect Transistor in Standard CMOS Technologies"

T. Nirschl, Mirjam Weis, M. Fulde et al. · IEEE Electron Device Letters · 2007 · 41 citations

Device Modeling, Tunneling Junction, Electrical Engineering +12

Fabrication, optimization and application of complementary Multiple-Gate Tunneling FETs

M. Fulde, Alexander Heigl, Mirjam Weis et al. · 2008 · 28 citations

Device Modeling, Present Fabrication, Electrical Engineering +10

A digitally controlled DC-DC converter for SoC in 28nm CMOS

F. Kuttner, Harun Habibovic, Thomas Hartig et al. · 2011 · 24 citations

Low-power Electronics, Electrical Engineering, Engineering +14