Visible photonic band gap engineering in silicon nitride waveguides

Abstract

We demonstrate experimentally the tuning of complete photonic band gaps in patterned silicon nitride waveguides. Transmission measurements were performed using an ultrabroadband high-brightness white light laser continuum, extracting extinction ratios as low as 10−4 in the gap regions. Angle-resolved measurements show the perfect alignment of the gap around the Γ-J direction.