Deep-center photoluminescence in undoped semi-insulating GaAs: 0.68 eV band due to the main deep donor

Nonradiative capture and recombination by multiphonon emission in GaAs and GaP

C. H. Henry, D. V. Lang · Physical review. B, Solid state · 1977 · 1.2K citations

Natural Sciences, Materials Science, Physics +16

The Standard Thermodynamic Functions for the Formation of Electrons and Holes in Ge, Si, GaAs , and GaP

C. D. Thurmond · Journal of The Electrochemical Society · 1975 · 680 citations

Natural Sciences, Materials Science, Physics +17

Optical assessment of the main electron trap in bulk semi-insulating GaAs

G. M. Martin · Applied Physics Letters · 1981 · 477 citations

Natural Sciences, Physics, Condensed Matter Physics +16

Deep-level optical spectroscopy in GaAs

A. Chantre, G. Vincent, D. Bois · Physical review. B, Condensed matter · 1981 · 455 citations

Engineering, Electrical Engineering, Physics +15

A study of deep levels in GaAs by capacitance spectroscopy

D. V. Lang, R. A. Logan · Journal of Electronic Materials · 1975 · 344 citations

Engineering, Electrical Engineering, Physics +14