Laser-induced reactions of semiconductor surfaces

Abstract

Laser-induced reactions of Ge(111), Si(111), GaAs(100), and InP(100) surfaces with chlorine under 355-, 560-, and 1064-nm laser irradiation have been investigated using a supersonic beam technique and time-resolved mass spectrometry. It has been found that the reaction yields depend not only on the laser fluence and wavelength, but also on the translational energy of the incident chlorine molecules. A possible mechanism of laser-induced reactions is proposed.