Atomic layer doped field-effect transistor fabricated using Si molecular beam epitaxy

Abstract

Atomic layer doped field-effect transistors (ALD FETs) have been fabricated, in which n-type, δ-doped, and p-type doped regions are used as a conductive channel and a punchthrough stopper, respectively. It is shown that the ALD FET shows a high transconductance while the punchthrough current is sufficiently suppressed, indicating that the device is promising as a short-channel FET for the next generation of ultralarge scale integration.