Doping of epitaxial layers and heterostructures based on HgCdTe

Abstract

Available publications concerned with doping of epitaxial layers of HgCdTe alloys and heterostructures based on these alloys are reviewed. The main changes in technology of HgCdTe doping, which occurred when device structures fabricated on the basis of bulk material were replaced by those based on epitaxial layers are analyzed. The specific features of the doping of HgCdTe epitaxial layers in the course of the growth of these layers by the liquid-phase epitaxy, metal-organic chemical vapor deposition, and molecular-beam epitaxy are considered. The electrical properties of the doped material are analyzed. The current concepts of the intrinsic defects in HgCdTe and the effect of these defects on the properties of HgCdTe are briefly considered.