Applied Physics Letters · 1978 · 63 citations · 5 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsOptoelectronicsSemiconductor MaterialsPhotovoltaic DevicesPhotovoltaic MaterialsSemiconductor PhysicsSemiconductor Thin FilmsSolar Cell MaterialsSolar CellsAnodic OxidationAntireflection CoatingsFabricationHeterojunction DevicesHeterojunction Solar CellsHeterojunctionsP-n Junction Solar CellsSolar Cell Fabrication
Conversion efficiencies as high as 20% of AM1 have been obtained for single-crystal GaAs shallow-homojunction solar cells without Ga1−xAlxAs layers. These cells, which are fabricated by a simplified technique that does not require any vacuum processing steps, utilize an n+/p/p+ structure with an antireflection coating prepared by anodic oxidation of the n+ layer.
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