Journal of Applied Physics · 1979 · 77 citations · 7 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsMaterials ChemistryMaterials PhysicsAmorphous MaterialsAmorphous SolidsElectronic Structure Of SolidsHydrogen AtomSilicon MaterialsX-ray Photoelectron SpectroscopyAmorphous AlloysAmorphous SiliconAmorphous StructureAtomic BondingHydrogen EvolutionOptical Band GapReactive SputteringTemperature Dependence
Amorphous SixC1−x : H alloys are prepared by simultaneous rf reactive sputtering of silicon and graphite in a H2-Ar gas mixture. Silicon, carbon, and hydrogen contents are measured for the entire range of x by electron spectroscopy for chemical analysis (ESCA), Rutherford-backscattering method, and thermal evolution of hydrogen. Evolution temperature dependence of the number of evolved hydrogen atoms is measured. The hydrogen-evolution behavior and the optical gap are x dependent. These phenomena are discussed in the light of chemical-bonding states.
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Substitutional doping of amorphous silicon
P. G. Le Comber · Solid State Communications · 1975 · 1.1K citations
Quantitative analysis of hydrogen in glow discharge amorphous silicon
M. H. Brodsky, Margaret A. Frisch, J. F. Ziegler et al. · Applied Physics Letters · 1977 · 313 citations · Full text