Stability and high-frequency operation of amorphous In–Ga–Zn–O thin-film transistors with various passivation layers

Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

Kenji Nomura, Hiromichi Ohta, Akihiro Takagi et al. · Nature · 2004 · 7.4K citations

Engineering, Electrical Engineering, Materials Science +16

Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film Transistors

Kenji Nomura, Akihiro Takagi, Toshio Kamiya et al. · Japanese Journal of Applied Physics · 2006 · 751 citations

Natural Sciences, Materials Engineering, Materials Science +17

Origins of threshold voltage shifts in room-temperature deposited and annealed a-In–Ga–Zn–O thin-film transistors

Kenji Nomura, Toshio Kamiya, Masahiro Hirano et al. · Applied Physics Letters · 2009 · 357 citations

Natural Sciences, Electrical Engineering, Physics +17

Modeling of amorphous InGaZnO4 thin film transistors and their subgap density of states

Hsing‐Hung Hsieh, Toshio Kamiya, Kenji Nomura et al. · Applied Physics Letters · 2008 · 352 citations

Engineering, Electrical Engineering, Physics +17

Defect passivation and homogenization of amorphous oxide thin-film transistor by wet O2 annealing

Kenji Nomura, Toshio Kamiya, Hiromichi Ohta et al. · Applied Physics Letters · 2008 · 310 citations

Engineering, Electrical Engineering, Materials Science +17