High Efficiency Cu₂ZnSn(S,Se)₄ Solar Cells by Applying a Double In₂S₃/CdS Emitter

Abstract

High-efficiency Cu2ZnSn(S,Se)4 solar cells are reported by applying In2S3/CdS double emitters. This new structure offers a high doping concentration within the Cu2ZnSn(S,Se)4 solar cells, resulting in a substantial enhancement in open-circuit voltage. The 12.4% device is obtained with a record open-circuit voltage deficit of 593 mV.