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High Efficiency Cu<sub>2</sub>ZnSn(S,Se)<sub>4</sub> Solar Cells by Applying a Double In<sub>2</sub>S<sub>3</sub>/CdS Emitter
442
Citations
14
References
2014
Year
EngineeringOrganic Solar CellPhotovoltaic DevicesPhotovoltaicsSemiconductor NanostructuresSemiconductorsIi-vi SemiconductorNanoelectronicsSolar Cell StructuresCompound SemiconductorElectrical EngineeringHigh-efficiency Cu2znsnHigh Doping ConcentrationSemiconductor MaterialSolar Physics (Solar Energy Conversion)Perovskite Solar CellApplied PhysicsSolar CellsSolar Cell Materials
High-efficiency Cu2ZnSn(S,Se)4 solar cells are reported by applying In2S3/CdS double emitters. This new structure offers a high doping concentration within the Cu2ZnSn(S,Se)4 solar cells, resulting in a substantial enhancement in open-circuit voltage. The 12.4% device is obtained with a record open-circuit voltage deficit of 593 mV.
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