Journal of Applied Physics · 1993 · 19 citations · 9 references
EngineeringMaterials EngineeringMaterials ScienceSemiconductor DevicesSemiconductor MaterialsThin FilmsP-n JunctionsPhotovoltaic DevicesSemiconductor Device MaterialsSemiconductor PhysicsSolar Cell MaterialsSolar CellsAnnealingImplantation Through Thin FilmsIon Implantation EffectsJunction RectificationP-n Junction CharacteristicsP-n Junction Solar CellsPolycrystalline Thin FilmsSemiconductor Characterization
Rectifying homojunction have been fabricated in polycrystalline CuInSe2 thin film. The p-n junction diode was obtained by short annealing in nitrogen atmosphere at 450 °C following the ion implantation of nitrogen with the energy and the dose of 50 keV and 1×1015 cm−2, respectively. The properties of the near surface region in the films implanted have been studied by the Raman scattering spectroscopy. The secondary ion mass spectroscopy depth profile of the nitrogens in the CuInSe2 film and the capacitive-voltage characteristics of the rectifying diode have been measured to characterize the junction properties. The photovoltaic characteristics in AM 1.0, 100 mW/cm2 are shown with the efficiency of 0.35%.
9
Electronic properties versus composition of thin films of CuInSe2
R. Noufi, R. Axton, C. R. Herrington et al. · Applied Physics Letters · 1984 · 257 citations · Full text
Junction electroluminescence in CuInSe2
P. Migliorato, B. Tell, J. L. Shay et al. · Applied Physics Letters · 1974 · 55 citations