Applied Physics Letters · 1984 · 257 citations · 3 references
Natural SciencesChemistryMaterials ScienceElectronic MaterialsSemiconductor MaterialsThin FilmsElectrical CharacterizationElectronic Material CharacterizationSemiconductor Device MaterialsSemiconductor Thin FilmsThin Film Electrical PropertiesThin-film MaterialsCarrier ConcentrationChalcogenide Thin FilmsDoping In Thin FilmsElectrical PropertiesElectrical Properties AnalysisElectrical Transport PropertiesMaterial Composition AnalysisMaterial Composition Modeling
The electrical properties of thin-film CuInSe2 (<4 μm thick) deposited by coevaporation of the elements have been measured by different techniques as a function of material composition. A correlation between the Cu/In and Se/metal ratios versus majority-carrier concentration is established. A qualitative scheme is developed, based on experiments, which predicts the majority-carrier type and concentration in relation to the stoichiometry of the material.
3
CuInSe2/CdS heterojunction photovoltaic detectors
S. Wagner, J. L. Shay, P. Migliorato et al. · Applied Physics Letters · 1974 · 403 citations
Impurity States in CuInSe<sub>2</sub>
H. Neumann, E. Nowak, G. Kühn · Kristall und Technik · 1981 · 79 citations
Natural Sciences, Materials Engineering, Materials Science +16