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Electrical characteristics of the vertical GaN rectifiers fabricated on bulk GaN wafer
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2011
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Electrical CharacteristicsWide-bandgap SemiconductorElectrical EngineeringBulk Gan WaferEngineeringHigh Voltage EngineeringGan WafersApplied PhysicsPower Semiconductor DeviceVertical Gan RectifiersGan Power DevicePower ElectronicsMicroelectronicsGa FaceBreakdown Voltage
Abstract Vertical Schottky rectifiers were fabricated on two GaN wafers synthesised by hydride vapor phase epitaxy (HVPE) process: n‐ epilayer on n+ bulk and n‐ bulk. Full backside ohmic contact and circular Schottky contacts were deposited on the N face and Ga face of the substrate, respectively. The devices showed excellent electrical characteristics. The device fabricated on n‐ epilayer on n+ bulk substrate showed a breakdown voltage of 348 V, a specific on‐state resistance of 4.2 mΩ·cm 2 and a leakage current density of 9.2×10 ‐6 A/cm 2 at ‐90 V. The device fabricated on n‐ bulk substrate showed a breakdown voltage of 600 V, a specific on‐state resistance of 1.3 mΩ·cm 2 and a leakage current density of 8.1×10 ‐8 A/cm 2 at ‐100 V. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)