Concepedia

Flexible Non‐Volatile Ferroelectric Polymer Memory with Gate‐Controlled Multilevel Operation

Sun Kak Hwang, Insung Bae, Richard Hahnkee Kim, Cheolmin Park

Advanced Materials · 2012 · 190 citations · 34 references

Abstract

A flexible field-effect transistor with a poly(3-hexylthiophene) (P3HT) active channel and a ferroelectric poly(vinlyidene fluoride-co-trifluoro ethylene) (PVDF-TrFE) insulator exhibits gate-voltage-controllable multilevel non-volatile memory characteristics with highly reliable data retention and endurance.

References

34

High-performance solution-processed polymer ferroelectric field-effect transistors

Ronald C. G. Naber, C. Tanase, Paul W. M. Blom et al. · Nature Materials · 2005 · 935 citations · Full text

Materials Science, Conducting Polymer, Electrical Engineering +3

Why is nonvolatile ferroelectric memory field-effect transistor still elusive?

T.P. Ma, Jin‐Ping Han · IEEE Electron Device Letters · 2002 · 508 citations

Materials Science, Non-volatile Memory, Electrical Engineering +12

Organic Resistive Memory Devices: Performance Enhancement, Integration, and Advanced Architectures

Byungjin Cho, Sunghun Song, Yongsung Ji et al. · Advanced Functional Materials · 2011 · 483 citations

Engineering, Organic Electronics, Emerging Memory Technology +17

Analysis of the contact resistance in staggered, top-gate organic field-effect transistors

T. Richards, Henning Sirringhaus · Journal of Applied Physics · 2007 · 280 citations

Device Modeling, Materials Science, Electrical Engineering +11

Printable Ferroelectric PVDF/PMMA Blend Films with Ultralow Roughness for Low Voltage Non‐Volatile Polymer Memory

Seok Ju Kang, Youn Jung Park, Insung Bae et al. · Advanced Functional Materials · 2009 · 256 citations · Full text

Engineering, Thin Film Process Technology, Transfer Printing +19