Reaction and Film Properties of Selective Titanium Silicide Low‐Pressure Chemical Vapor Deposition

Abstract

The reaction processes of selective titanium silicide low‐pressure chemical vapor deposition using a gas system at 720 to 740°C are studied, in conjunction with film properties, using quadrupole mass spectrometry measurements and other analyses. In the initial stage of deposition, and the silicon substrate react to produce , , an undetermined silicide, and . This reaction explains the high sensitivity to the native oxide. After that, the gas joins into the reaction to produce , , , relatively small amounts of , and . This reaction moderates silicon consumption and changes the film properties. The features of this reaction at higher temperatures of 780 to 820°C are similar to those exhibited at 720 to 740°C. Nucleation is discussed in terms of stress generation by a gradient in the Ti/Si composition, caused by independent changes in the source‐gas decomposition rates.