Bipolar resistive switching performance of the nonvolatile memory cells based on (AgI)0.2(Ag2MoO4)0.8 solid electrolyte films

Abstract

Resistive switching memory cells with polycrystalline (AgI)0.2(Ag2MoO4)0.8 (AIMO) solid electrolyte films as storage medium were fabricated on SiO2/Pt/Ti/Si substrates by using pulse laser deposition technique and focused ion beam lithography. X-ray diffraction, scanning electron microscopy, and energy dispersive x-ray analysis have been employed to investigate the structure, the surface morphology, and the composition of AIMO thin films. The Ag/AIMO/Pt memory cells with sandwich structure exhibit stable, reproducible, and reliable resistive switching characteristics. The ratio of resistance between high resistance states and low resistance states can reach ∼105. Moreover, the low resistance is ∼500 Ω at a compliance current of 0.5 mA, which is favorable to reduce the power dissipation of the entire circuit. The switching-on mechanism has been discussed and the metallic conduction characteristic has also been verified. The fast response speed and the good retention properties further indicate that polycrystalline AIMO thin film is a potential candidate for the next generation nonvolatile memory.