Fabrication of Storage Capacitance-Enhanced Capacitors with a Rough Electrode

Abstract

In order to produce high-performance capacitors with a rough surface polysilicon film as a storage electrode, we investigate various fabrication conditions for polysilicon films. We fabricated such capacitors that attained 1.55 times as much capacitance as those with a conventional polysilicon electrode. Capacitors with the rough electrode show almost identical leakage current characteristics to those of conventional ones. In the evaluation of their reliability, we found that they have lifetimes of more than 1×10 10 seconds, which is sufficient for next-generation DRAM applications.