Effect of Carrier Heating on the Diffusion Currents in Space-Charge-Limited Current Flow

Abstract

The theory of hot electron diffusion is developed for the case of space-charge-limited current flow in insulators or weakly doped semiconductors. To compare the results of the calculation with experiments on silicon n+-π-n+ structures by Denda and Nicolet, a crude theory of the uniform-field hot-electron effect in n-type silicon is developed.