Semiconductor Science and Technology · 2009 · 14 citations · 23 references
EngineeringOrganic ElectronicsOptoelectronic DevicesThin Film Process TechnologyChemistrySemiconductor DeviceChemical EngineeringElectronic DevicesWo3 InterlayerOrganic ElectrochemistryPentacene-based OtftThin Film ProcessingMaterials ScienceElectrical EngineeringOrganic SemiconductorSaturation MobilityOrganic MaterialsElectronic MaterialsFlexible ElectronicsSurface ScienceOrganic Thin-film TransistorsThin Films
Pentacene-based organic thin film transistors (OTFTs) with WO3/Au as source/drain (S/D) electrodes were fabricated. In comparison with the pentacene-based OTFT having Au-only S/D electrodes, the performance of a device having WO3/Au S/D electrodes has been considerably improved. The saturation mobility increased from 0.39 to 2.8 cm2 (V s)−1, the threshold voltage reduced from −21.3 to −11.2 V, the on/off ratio shifted from 6.7 × 105 to 1.5 × 107 and the threshold swing varied from 3.75 to 1.82 V dec−1. The improvement was attributed to (i) the significant reduction of contact resistance by using the WO3 interlayer and (ii) the strong heat radiation during the thermal evaporation of WO3. Our results indicated that using WO3/Au as S/D electrodes is an effective approach to improving pentacene-based OTFT's performance.
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