Electron-beam-induced current investigations of cw laser-annealed silicon

Abstract

The electron-beam-induced current in As+-implanted Si is investigated after cw laser annealing. These experiments show that the laser power ’’window’’ for successful laser annealing is quite small; low charge collection efficiency usually results. To date, the best annealing results were obtained for a highly overlapping laser scan (100-μm beam with 6-μm scan steps), at a laser power approximately 70 –75% of the power required for melting. At higher laser power, evidence for laser-induced damage has been observed. This evidence suggests that the damage extends several microns below the implanted layer.