Boron diffusion in silicon

Abstract

Well-defined control of high-and low-temperature anneals of boron implanted in silicon is important in the calculation of shallow p-n junction profiles used in MOSFET's. Here, a sample matrix of boron implanted into silicon over a range of fluences and annealing temperatures is considered. The matrix of samples was measured by SIMS (secondary ion mass spectrometry). The measured profiles were compared with simulations from an annealing/diffusion model. Calculations of the annealed profiles were found to be in agreement with the SIMS data at temperatures greater than 1000°C. At lower temperatures, the profiles exhibit effects due to implantation damage which are not included in the diffusion model.