Concepedia

AlxGa1−xN/GaN/AlN heterostructures grown on Si(111) substrates by MBE for MSM UV photodetector applications

Mohd Zaki Mohd Yusoff, Z. Hassan, H. Abu Hassan, M.J. Abdullah, M. Rusop, Mohd Zamir Pakhuruddin

Materials Science in Semiconductor Processing · 2015 · 23 citations · 33 references

DOI

Concepts

References

33

III–nitrides: Growth, characterization, and properties

S.C. Jain, M. Willander, J. Narayan et al. · Journal of Applied Physics · 2000 · 1.3K citations

, , +17

Metal-semiconductor contacts

M. Pepper · Physics in Technology · 1974 · 1.1K citations

Phonon dispersion and Raman scattering in hexagonal GaN and AlN

V. Yu. Davydov, Yu. É. Kitaev, I. N. Goncharuk et al. · Physical review. B, Condensed matter · 1998 · 820 citations

, , +17

Substrates for gallium nitride epitaxy

L. Liu, James H. Edgar · Materials Science and Engineering R Reports · 2002 · 809 citations

, , +12

Stress and its effect on optical properties of GaN epilayers grown on Si(111), 6H-SiC(0001), and <i>c</i>-plane sapphire

Degang Zhao, Shijie Xu, Mingyu Xie et al. · Applied Physics Letters · 2003 · 420 citations

, , +17