A novel program-erasable high-/spl kappa/ AlN-Si MIS capacitor

Abstract

We demonstrate a programmable-erasable MIS capacitor with a single layer high-/spl kappa/ AlN dielectric on Si having a high capacitance density of /spl sim/5 fF/μm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . It has low program and erase voltages of +4 and -4 V, respectively. Such an erase function is not available in other single layer Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> , AlON, or other known high-/spl kappa/ dielectric capacitors, where the threshold voltage (V/sub th/) shifts continuously with voltage. This device exhibits good data retention with a V/sub th/ change of only 0.06 V after 10 000 s.