Publication | Closed Access
High field transport in GaN/AlGaN heterostructures
47
Citations
30
References
2004
Year
Wide-bandgap SemiconductorAluminium NitrideHigh Field TransportEngineeringPhysicsNanoelectronicsApplied PhysicsAluminum Gallium NitrideMonte Carlo TechniquesGan Power DeviceTheoretical StudiesMicroelectronicsOptoelectronicsCategoryiii-v SemiconductorAlgan/gan Heterostructures
Experimental as well as theoretical studies have been performed on the velocity-field characteristics of AlGaN/GaN heterostructures. A comparison of these studies shows that the experimental velocities are comparable to those expected from previously published simulations based upon Monte Carlo techniques. Several possible mechanisms for the low value of the velocity previously found are discussed, including nonequilibrium phonons and local inhomogeneities in the field.
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