<title>Efficient process development for bulk silicon etching using cellular automata simulation techniques</title>

Abstract

This paper describes cellular automata simulation techniques used to predict the anisotropic etching of single-crystal silicon. In particular, this paper will focus on the application of wet etching of silicon wafers using typical anisotropic etchants such as KOH, TMAH, and EDP. Achieving a desired final 3D geometry of etch silicon wafers often is difficult without requiring a number of fabrication design iterations. The result is wasted time and resources. AnisE, a tool to simulate anisotropic etching of silicon wafers using cellular automata simulation, was developed in order to efficiently prototype and manufacture MEMS devices. AnisE has been shown to effectively decrease device development time and costs by up to 50% and 60%, respectively.