Hrxrd Study of the Strain Properties of MBE-Grown ZnSe and ZnSTe on GaAs

The interpretation of X-ray rocking curves from III–V semiconductor device structures

M. A. G. Halliwell, M. H. Lyons, M. J. Hill · Journal of Crystal Growth · 1984 · 232 citations

Natural Sciences, Electrical Engineering, Materials Science +9

Degradation of II-VI based blue-green light emitters

Supratik Guha, J. M. DePuydt, M. A. Haase et al. · Applied Physics Letters · 1993 · 224 citations

Engineering, Electrical Engineering, Materials Science +17

Structural properties of the ZnSe/GaAs system grown by molecular-beam epitaxy

J. Petruzzello, B. Greenberg, D. A. Cammack et al. · Journal of Applied Physics · 1988 · 155 citations

Natural Sciences, Materials Engineering, Materials Science +17

Growth of undoped ZnSe on (100) GaAs by molecular-beam epitaxy: An investigation of the effects of growth temperature and beam pressure ratio

J. M. DePuydt, Hai‐Ping Cheng, J. E. Potts et al. · Journal of Applied Physics · 1987 · 82 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

The variation of energy gap with composition in ZnS-Te alloys

R. Hill, David J. Richardson · Journal of Physics C Solid State Physics · 1973 · 80 citations

Natural Sciences, Materials Science, Physics +16