Effect of H₂ Plasma Etching during Glow-Discharge Deposition of Amorphous Carbon Films

Abstract

Amorphous carbon films were prepared by the glow-discharge decomposition of C 2 H 2 , C 2 H 4 , and C 2 F 6 at various rf powers and substrate temperatures ( T s ). The deposition rate (DR) of a-C:H and a-C:H:F decreases with increase in T s . These results are discussed in terms of the H-plasma etching of a-C:H films during the deposition. The optical, electrical and structural properties of the a-C:H films are also examined as a function of the rf power.