256×192 pixel field emitter array image sensor with high-gain avalanche rushing amorphous photoconductor target

Yoshiro Takiguchi, Masakazu Nanba, Katsunori Osada, Toshihisa Watabe, S. Okazaki, N. Egami, Kenkichi Tanioka, Mitsuru Tanaka, S. Itoh

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2004 · 16 citations · 4 references

Concepts

Abstract

A 256×192 pixel field emitter array (FEA) image sensor with a highly sensitive high-gain avalanche rushing amorphous photoconductor (HARP) target was fabricated and tested as a step toward the development of a practical image sensor for ultrahigh sensitivity and ultrahigh-definition compact TV cameras. The experimental results showed that the prototype had an adequate resolution corresponding to the spot size of the scanning electrons on the HARP target which was estimated by the simulation. The prototype also had a wide dynamic range and high sensitivity, demonstrating its potential as a next generation practical image sensor and offering new application of FEAs.

References

4