Influence of oxygen on the sputtering of aluminum oxide for the surface passivation of crystalline silicon

MOS (Metal Oxide Semiconductor) Physics and Technology

K.J.S. Cave · IEE Proceedings I Solid State and Electron Devices · 1983 · 1.7K citations

Engineering, Chemical Engineering, Nuclear Engineering +12

Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3

Bram Hoex, S. B. S. Heil, E. Langereis et al. · Applied Physics Letters · 2006 · 720 citations · Full text

Engineering, Materials Engineering, Materials Science +17

On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3

Bram Hoex, J. J. H. Gielis, M. C. M. van de Sanden et al. · Journal of Applied Physics · 2008 · 538 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Surface passivation of high‐efficiency silicon solar cells by atomic‐layer‐deposited Al₂O₃

Jan Schmidt, Agnes Merkle, Rolf Brendel et al. · Progress in Photovoltaics Research and Applications · 2008 · 453 citations

Engineering, Materials Engineering, Materials Science +17

Measurement of the emitter saturation current by a contactless photoconductivity decay method.

D.E. Kane, R.M. Swanson · Photovoltaic Specialists Conference · 1985 · 447 citations

Engineering, Electrical Engineering, Electronic Materials +9