Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 1990 · 10 citations · 0 references
EngineeringMaterials EngineeringMaterials ScienceHeat TransferOptoelectronicsSemiconductor DevicesCalibrationInfrared InstrumentationOptical InstrumentationSensor CalibrationTemperature MeasurementTemperature MetrologyEmissivityOptical CharacterizationOptical PyrometryRoughnessSiliconThermal CalibrationThermal EmissivityThermal Sensor Calibration
The effective emissivity of silicon varies with both temperature and the backside roughness of a wafer. Both of these variations need to be accounted for in the calibration of infrared optical pyrometers used in rapid thermal processing. A fully integrated hardware and software approach is described which calibrates the optical pyrometer over a temperature range of 350°C to 1275°C and provides for recalibration due to wafer to wafer variations in effective emissivity based on room temperature optical characterization of wafer backsides.