In-situ doping and composition monitoring for molecular beam epitaxy using mass spectroscopy of recoiled ions (MSRI)

Dynamics of film growth of GaAs by MBE from Rheed observations

J.H. Neave, B.A. Joyce, Peter J. Dobson et al. · Applied Physics A · 1983 · 958 citations

Natural Sciences, Materials Engineering, Materials Science +14

Multiple-focusing time-of-flight mass spectrometers Part II. TOFMS with equal energy acceleration

W. Poschenrieder · International Journal of Mass Spectrometry and Ion Physics · 1972 · 250 citations

Natural Sciences, Chemistry, Analytical Chemistry +9

The measurement of energy spectra of neutral particles in low energy ion scattering

S.B. Luitjens, A.J. Algra, E.P.Th.M. Suurmeijer et al. · Applied Physics A · 1980 · 66 citations

Natural Sciences, Physics, Nuclear Physics +9

Direct recoil sputtering and secondary ion production

W. Eckstein · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1987 · 55 citations

Natural Sciences, Physics, Nuclear Physics +9

The temperature dependent variation of bulk and surface composition of InxGa1−xAs on GaAs grown by chemical beam epitaxy studied by RHEED, X-ray diffraction and XPS

Henrik Hansen, A. Bensaoula, S. Tougaard et al. · Journal of Crystal Growth · 1992 · 19 citations

Engineering, Materials Engineering, Materials Science +15